A wide-band bridge yielding directly the device parameters of junction transistors

A method is described for determining on a bridge the nine elements of an equivalent circuit for junction transistors which is accurate at both low and high frequencies. These nine-device parameters, which include the collector-to-base interelectrode capacitance, could be determined in four independent steps of a multiposition switch, but for the sake of limiting the complexity of the equipment, five steps have been employed. All measurements are based entirely on the equivalent circuit and not on the choice of a particular set of four-pole quantities such as the of parameters. Fortuitously, the transistor terminations indicated are those most easily achieved in practice, viz., a short circuit on the collector side and an open circuit on the base (or emitter) side.