Title :
Strong increase of the derivative of the carrier-induced index change of semiconductor lasers at low injected carrier density
Author :
Shin, S. ; Su, C.B.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
The carrier-induced index change of a semiconductor laser was measured for injected carrier density ranging from 3 * 10/sup 16/ cm/sup -3/ to 2 * 10/sup 18/ cm/sup -3/. A strong nonlinear behavior between index change and carrier density is observed. The derivative of the index change versus carrier density at low carrier density can be 15 times larger than the derivative of the index change at high carrier density.<>
Keywords :
carrier mobility; laser variables measurement; nonlinear optics; optical modulation; refractive index; semiconductor lasers; carrier density; carrier-induced index change; high carrier density; index change derivative; injected carrier density; low carrier density; low injected carrier density; semiconductor lasers; strong nonlinear behavior; Charge carrier density; Density measurement; Fabry-Perot; Laser excitation; Laser theory; Laser transitions; Optical modulation; Pump lasers; Semiconductor lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
