• DocumentCode
    1012135
  • Title

    Strain dependence of the linewidth enhancement factor in long-wavelength tensile- and compressive-strained quantum-well lasers

  • Author

    Kimura, Akitaka ; Nido, Masaaki ; Murata, Shigeru ; Shimizu, Jun-Ichi ; Naniwae, Kouichi ; Suzuki, Akira

  • Author_Institution
    Optoelectron. Res. Lab., NEC Corp., Ibaraki, Japan
  • Volume
    5
  • Issue
    9
  • fYear
    1993
  • Firstpage
    983
  • Lastpage
    986
  • Abstract
    Values of the linewidth enhancement factor alpha in InGaAs/InGaAsP tensile- and compressive-strained quantum-well (QW) Fabry-Perot lasers are measured and compared to calculated values. The strain dependence of the measured values agrees with that of the calculated values: Values of alpha are smaller for tensile-strained QW lasers than for compressive-strained QW lasers, and alpha decreases with the increase of tensile or compressive strain. According to the model used in the calculation, short-wavelength-composition barriers reduce alpha in compressive-strained QW lasers, and alpha for such lasers is expected to be as low as that for the tensile-strained QW lasers.<>
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; InGaAs/InGaAsP; QW Fabry-Perot lasers; compressive-strained quantum-well lasers; linewidth enhancement factor; long-wavelength; short-wavelength-composition barriers; strain dependence; tensile-strained quantum-well lasers; Charge carrier density; Electrons; Laser modes; Laser theory; Laser transitions; Laser tuning; Quantum well lasers; Semiconductor lasers; Strain measurement; Tensile strain;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.257166
  • Filename
    257166