Title :
Monolithic integration of an amplifier and a phase modulator fabricated in a GRINSCH-SQW structure by placing the junction below the quantum well
Author :
No, Kun H. ; Blackwell, Richard J. ; Herrick, Robert W. ; Levy, Joseph L.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA
Abstract :
We present results of a novel semiconductor optical amplifier device in which an amplifier and a phase modulator are integrated into a fundamental transverse-mode ridge waveguide. By placing the p-n junction below the quantum well (QW) during epitaxial growth and utilizing the effect of the electric field on the depletion width, the phase of the light from an integrated optical amplifier-modulator is varied. For a modulation reverse bias voltage range of 0.4 V, we have demonstrated a 360 degrees /mm phase shift with less than 1.2 dB of amplitude modulation.<>
Keywords :
integrated optoelectronics; optical modulation; optical waveguides; p-n junctions; phase modulation; semiconductor lasers; GRINSCH-SQW structure; amplitude modulation; depletion width; electric field; epitaxial growth; fundamental transverse-mode ridge waveguide; integrated optical amplifier-modulator; light phase; modulation reverse bias voltage range; monolithic integration; p-n junction; phase modulator; phase shift; quantum well; semiconductor optical amplifier; semiconductor optical amplifier device; Amplitude modulation; Epitaxial growth; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical waveguides; P-n junctions; Phase modulation; Semiconductor optical amplifiers; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
