Effects of ridge depth on characteristics of shielded velocity-matched (SVM) Ti:LiNbO/sub 3/ optical modulators with ridge structures

Author

Kawano, Kenji

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

5

Issue

9

fYear

1993

Firstpage

993

Lastpage

995

Abstract

The effects of ridge depth on the microwave effective index, characteristic impedance of the traveling-wave electrode, and modulation bandwidth of shielded velocity-matched Ti:LiNbO/sub 3/ optical modulators with ridges are investigated numerically. It is clarified that the driving voltage has an optimum ridge depth (3-4 mu m) for various gaps of the electrode, and there are optimum overlaid layer thicknesses at the velocity matching point for given values of the ridge depth.<>

Keywords

electric impedance; electro-optical devices; integrated optics; lithium compounds; optical modulation; refractive index; titanium; 3 to 4 mum; LiNbO/sub 3/:Ti; characteristic impedance; driving voltage; electrode gaps; microwave effective index; modulation bandwidth; optical modulators; optimum overlaid layer thicknesses; optimum ridge depth; ridge depth; ridge structures; shielded velocity-matched; traveling-wave electrode; velocity matching point; Bandwidth; Buffer layers; Coplanar waveguides; Electrodes; Optical buffering; Optical films; Optical modulation; Optical waveguides; Support vector machines; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257169

Filename

257169