Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser

Author

Zhou, Ping ; Cheng, Julian ; Zolper, J.C. ; Lear, K.L. ; Chalmers, S.A. ; Vawter, G.A. ; Leibenguth, R.E. ; Adams, A.C.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

5

Issue

9

fYear

1993

Firstpage

1035

Lastpage

1038

Abstract

We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW DC at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under DC bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.<>

Keywords

aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical switches; semiconductor lasers; semiconductor switches; 27 mW; 55 mW; DC bias conditions; GaAs; GaAs-AlGaAs; GaAs/AlGaAs; heterojunction bipolar transistor; high current gain; high optical-to-electrical conversion efficiency; high-performance electrical-to-optical interface; high-speed optical interconnections; low power dissipation; monolithic optoelectronic switch; optical output levels; vertical-cavity surface-emitting laser; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Integrated optoelectronics; Optical design; Optical interconnections; Optical switches; Power dissipation; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257183

Filename

257183