Title :
Resonant cavity light emitting diode and detector using epitaxial liftoff
Author :
Corbett, B. ; Considine, L. ; Walsh, S. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED´s) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.<>
Keywords :
electroluminescence; light emitting diodes; mirrors; optical resonators; p-i-n photodiodes; photoluminescence; spatial light modulators; CW; InP-InGaAs; InP/InGaAs; detecting arrays; detector; electroluminescence; epitaxial liftoff; metal mirrors; p-i-n structure; photoluminescence spectral width; physics; resonant cavity light emitting diode; resonant detector; reverse bias; room temperature; spatial light modulators; spectral width; spontaneous emission; unprocessed layers; vertical resonant cavity light emitting diodes; vertically emitting resonant cavity; Electroluminescence; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Mirrors; Optical arrays; PIN photodiodes; Resonance; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
