Resonant cavity light emitting diode and detector using epitaxial liftoff

Author

Corbett, B. ; Considine, L. ; Walsh, S. ; Kelly, W.M.

Author_Institution

Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland

Volume

5

Issue

9

fYear

1993

Firstpage

1041

Lastpage

1043

Abstract

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED´s) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.<>

Keywords

electroluminescence; light emitting diodes; mirrors; optical resonators; p-i-n photodiodes; photoluminescence; spatial light modulators; CW; InP-InGaAs; InP/InGaAs; detecting arrays; detector; electroluminescence; epitaxial liftoff; metal mirrors; p-i-n structure; photoluminescence spectral width; physics; resonant cavity light emitting diode; resonant detector; reverse bias; room temperature; spatial light modulators; spectral width; spontaneous emission; unprocessed layers; vertical resonant cavity light emitting diodes; vertically emitting resonant cavity; Electroluminescence; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Mirrors; Optical arrays; PIN photodiodes; Resonance; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257185

Filename

257185