Title :
An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications
Author :
Lin, C.L. ; Fernández, J.M. ; Wieder, H.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
Abstract :
An anisotype heterojunction field-effect transistor (A-HJFET) for GaAs digital integrated circuit applications is proposed. A thin, highly doped, strained In/sub x/Ga/sub 1-x/As (x>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; integrated logic circuits; 2 V; 5 micron; 80 mS; GaAs digital integrated circuit applications; GaAs-In/sub x/Ga/sub 1-x/As; anisotype heterojunction field-effect transistor; digital logic applications; dynamic gate voltage range; forward gate bias voltage; gate lengths; leakage current; p/sup +/-GaAs cap; thin n-channel; transconductance; Digital integrated circuits; Dynamic range; FETs; Gallium arsenide; Heterojunctions; Leakage current; Logic circuits; Substrates; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
