DocumentCode :
1012386
Title :
An MQW-SQW tapered waveguide transition
Author :
Kim, Hyoun So0 ; Sinha, Sanjai ; Ramaswamy, Ramu V.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
5
Issue :
9
fYear :
1993
Firstpage :
1049
Lastpage :
1052
Abstract :
We demonstrate an adiabatic, tapered transition in a multiquantum-well (MQW) and single-quantum-well (SQW) coupled structure. The refractive index of the MQW is tapered by the disordering of the AlGaAs/GaAs layers using z-variant, Zn diffused, impurity-induced layer disordering (IILD). We analyze the tapered structure using the step transition model and multilayer stack theory. Results are in excellent agreement with the measurements, establishing the adiabatic nature of the transition.<>
Keywords :
aluminium compounds; gallium arsenide; integrated optics; optical waveguides; refractive index; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs/GaAs layer; MQW-SQW tapered waveguide transition; SQW; Zn; Zn diffused; adiabatic; coupled structure; disordering; impurity-induced layer disordering; multilayer stack theory; multiquantum-well; planar waveguides; refractive index; single-quantum-well; step transition model; z-variant; Electron optics; Optical crosstalk; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Quantum well devices; Tellurium; Waveguide transitions; Zinc;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.257188
Filename :
257188
Link To Document :
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