An MQW-SQW tapered waveguide transition

Author

Kim, Hyoun So0 ; Sinha, Sanjai ; Ramaswamy, Ramu V.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

5

Issue

9

fYear

1993

Firstpage

1049

Lastpage

1052

Abstract

We demonstrate an adiabatic, tapered transition in a multiquantum-well (MQW) and single-quantum-well (SQW) coupled structure. The refractive index of the MQW is tapered by the disordering of the AlGaAs/GaAs layers using z-variant, Zn diffused, impurity-induced layer disordering (IILD). We analyze the tapered structure using the step transition model and multilayer stack theory. Results are in excellent agreement with the measurements, establishing the adiabatic nature of the transition.<>

Keywords

aluminium compounds; gallium arsenide; integrated optics; optical waveguides; refractive index; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs/GaAs layer; MQW-SQW tapered waveguide transition; SQW; Zn; Zn diffused; adiabatic; coupled structure; disordering; impurity-induced layer disordering; multilayer stack theory; multiquantum-well; planar waveguides; refractive index; single-quantum-well; step transition model; z-variant; Electron optics; Optical crosstalk; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Quantum well devices; Tellurium; Waveguide transitions; Zinc;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257188

Filename

257188