DocumentCode
1012430
Title
CW operation at - 10°C for InGaAlP visible light laser diodes grown by MOCVD
Author
Ishikawa, Masatoshi ; Ohba, Yuzuru ; Sugawara, H. ; Yamamoto, Manabu ; Nakanisi, T.
Author_Institution
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Volume
21
Issue
23
fYear
1985
Firstpage
1084
Lastpage
1085
Abstract
CW operation at - 10°C for InGaP/InGaAlP double heterostructure (DH) laser diodes has been achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapour deposition using methyl metalorganics as the source of group III elements. Under room-temperature pulsed operation, the lasing wavelength was 663 nm and the lowest threshold current density was 7.8 kA/cm2. The CW characteristic temperature T0 was 63 K at around -30°C.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 663 nm lasing wavelength; CW operation; III-V semiconductors; InGaAlP; InGaP/InGaAlP double heterostructure laser diodes; MOCVD; group III elements; lasing wavelength; metalorganic chemical vapour deposition; methyl metalorganics; threshold current density; visible light laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850770
Filename
4251610
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