Title :
CW operation at - 10°C for InGaAlP visible light laser diodes grown by MOCVD
Author :
Ishikawa, Masatoshi ; Ohba, Yuzuru ; Sugawara, H. ; Yamamoto, Manabu ; Nakanisi, T.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
CW operation at - 10°C for InGaP/InGaAlP double heterostructure (DH) laser diodes has been achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapour deposition using methyl metalorganics as the source of group III elements. Under room-temperature pulsed operation, the lasing wavelength was 663 nm and the lowest threshold current density was 7.8 kA/cm2. The CW characteristic temperature T0 was 63 K at around -30°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 663 nm lasing wavelength; CW operation; III-V semiconductors; InGaAlP; InGaP/InGaAlP double heterostructure laser diodes; MOCVD; group III elements; lasing wavelength; metalorganic chemical vapour deposition; methyl metalorganics; threshold current density; visible light laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850770
