Title :
Stripe-structure dependence of frequency modulation characteristics of AlGaAs lasers
Author :
Kikuchi, Kazuro ; Fukushima, Tetsuya ; Okoshi, Tadashi
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Abstract :
Frequency modulation characteristics of AlGaAs lasers having three kinds of stripe structures, channelled substrate planar (CSP), buried hetero- (BH) and transverse junction stripe (TJS) structures, are investigated. The phase relation between the frequency modulation and modulation current show two types of dependence on the modulation frequency. It is shown that this result is explained well by considering inhomogeneous carrier density distributions in the lateral direction across active layers.
Keywords :
III-V semiconductors; aluminium compounds; frequency modulation; gallium arsenide; optical modulation; semiconductor junction lasers; AlGaAs lasers; III-V semiconductor; buried hetero-stripe structures; channeled substrate planar stripe structures; frequency modulation characteristics; inhomogeneous carried density distributions; lateral direction; modulation current; stripe structure dependence; transverse junction stripe structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850773
