Heterojunction diodes formed using thin-film C containing polycrystalline diamond and Si

Author

Amaratunga, Gehan ; Milne, William ; Putnis, Andrew

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

11

Issue

1

fYear

1990

Firstpage

33

Lastpage

35

Abstract

Diodelike I-V characteristics measured in Al/C/Si structures formed by depositing thin C films onto Si substrates from a CH/sub 4//Ar plasma are discussed. The films, which contain polycrystalline diamond grains, are 500-1000 A thick. It is shown that the true I-V characteristics can be measured only after removing the fixed interface charge at the metal-C interface. By taking the C to be an intrinsic polycrystalline semiconductor, it is possible to treat the diode characteristics as arising from the presence of a C/Si heterojunction.<>

Keywords

aluminium; diamond; plasma deposition; semiconductor diodes; semiconductor-metal boundaries; silicon; 500 to 1000 AA; Al-C-Si heterojunction diodes; Ar; C/Si heterojunction; CH/sub 4//Ar plasma; I-V characteristics; Si substrate; diode characteristics; interface charge; intrinsic polycrystalline semiconductor; metal-C interface; methane; polycrystalline diamond; Argon; Charge measurement; Current measurement; Heterojunctions; Plasma measurements; Plasma properties; Semiconductor diodes; Semiconductor films; Substrates; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46922

Filename

46922