Title :
An analysis of transistor base spreading resistance and associated effects
Author_Institution :
Bell Telephone Labs., Inc., Allentown, Pa.
fDate :
4/1/1958 12:00:00 AM
Keywords :
Charge carriers; Conductivity; Convergence; Flanges; Frequency; Geometry; Glass; Hydrogen; Impedance; Production facilities; Surface impedance; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1958.14360
