• DocumentCode
    1012519
  • Title

    SiGe/Si bifurcation optical active switch based on plasma dispersion effect

  • Author

    Gao, Y. ; Li, G.Z. ; Liu, X.D. ; Liu, E.K. ; Zhang, X.J. ; Lu, X.K. ; Hu, J.H. ; Wang, X.

  • Author_Institution
    Dept. of Electron. Eng., Xi´´an Jiaotong Univ., China
  • Volume
    31
  • Issue
    20
  • fYear
    1995
  • fDate
    9/28/1995 12:00:00 AM
  • Firstpage
    1740
  • Lastpage
    1741
  • Abstract
    Based on the plasma dispersion effect of Si1-xGex , 2×2 bifurcation optical active switches have been fabricated, in which the Si1-xGex was grown by molecular beam epitaxy. At a 36 mA injection current, the device reaches maximum optical switching. The crosstalk is less than -11 dB and the insertion loss is 3.8 dB. The measured response time is <100 ns
  • Keywords
    Ge-Si alloys; bifurcation; integrated optics; molecular beam epitaxial growth; optical crosstalk; optical losses; optical switches; optical waveguide components; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor plasma; 3.8 dB; 36 mA; SiGe-Si; bifurcation optical active switch; crosstalk; injection current; insertion loss; molecular beam epitaxy; plasma dispersion effect; response time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951204
  • Filename
    469225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012519