Title :
Novel mechanism for fabrication of high-power superluminescent light-emitting diodes (SLDs)
Author :
Figueroa, L. ; Morrison, Cherrelle ; Zinkiewicz, Z. ; Niesen, J.
Author_Institution :
TRW Electro Optics Research Center, Redondo Beach, USA
Abstract :
A novel mechanism using a nonuniform gain profile for fabricating high-power superluminescent light-emitting diodes with a broad spectral width is described. The analysis indicates that GaInAsP/InP devices have significant potential for such SLDs, and the techniques discussed can be used to fabricate laser diodes with broad spectral widths.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; GaInAsP/InP devices; III-V semiconductors; SLDs; broad spectral width; high power SLD fabrication; high-power superluminescent light emitting diodes; laser diodes; nonuniform gain profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850785
