DocumentCode
1012580
Title
Microstructure and magnetic properties of CoCr thin films formed on Ge layer
Author
Futamoto, M. ; Honda, Y. ; Kakibayashi, H. ; Yoshida, K.
Author_Institution
Central Research Laboratory, Hitachi Ltd., Kokubunji Tokyo, Japan.
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1426
Lastpage
1428
Abstract
To improve the c-axis oriented columnar growth, the nucleation of CoCr crystals on various underlayers which are formed on substrates prior to CoCr alloy deposition is studied. Microstructures of vacuum deposited CoCr alloy films are examined by transmission electron microscopy (TEM). It is found that an amorphous-like Ge is a suitable underlayer material to prepare highly oriented CoCr films. Cross-sectional TEM study indicates that the CoCr film formed on Ge layer consists of pillarlike crystals grown vertically throughout the film thickness. The CoCr film formed on Ge layer has a large perpendicular magnetic anisotropy. The read-write (R/W) characteristics have been markedly improved using the highly oriented CoCr film and a very high recording density of D50 =230 kFCI is achieved, The role of the Ge layer on nucleation of CoCr crystal is discussed.
Keywords
Magnetic film memories; Perpendicular magnetic recording; Amorphous magnetic materials; Crystal microstructure; Crystalline materials; Disk recording; Magnetic films; Magnetic materials; Magnetic properties; Perpendicular magnetic anisotropy; Substrates; Transmission electron microscopy;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1064012
Filename
1064012
Link To Document