DocumentCode
1012612
Title
Comparison of the effects of oxygen on cobalt and cobalt-chromium thin films
Author
Thompson, J.A. ; Stevenson, D.A.
Author_Institution
Magnetic Peripherals, Inc., Stanford University, Santa Clara, CA.
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1441
Lastpage
1443
Abstract
Oxygen has been intentionally incorported into sputtered Co and Co-Cr films by the addition of controlled amounts of oxygen to the argon sputter gas atmosphere. The influence of the oxygen incorporation was evaluated by the analysis of the magnetic properties and the structural characteristics of the films. The coercivity was found to increase with increasing oxygen incorporation for both Co and Co-Cr films. The saturation magnetization (Ms ) in Co decreases as the oxygen content increases whereas Ms for Co-Cr films initially increases as Cr is depleted by selective oxidation. The mechanism for the change in coercivity is attributed to changes in the coupling between magnetic regions, rather than changes in grain size.
Keywords
Magnetic film memories; Argon; Atmosphere; Cobalt; Coercive force; Magnetic analysis; Magnetic films; Oxygen; Saturation magnetization; Sputtering; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1064015
Filename
1064015
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