• DocumentCode
    1012612
  • Title

    Comparison of the effects of oxygen on cobalt and cobalt-chromium thin films

  • Author

    Thompson, J.A. ; Stevenson, D.A.

  • Author_Institution
    Magnetic Peripherals, Inc., Stanford University, Santa Clara, CA.
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1441
  • Lastpage
    1443
  • Abstract
    Oxygen has been intentionally incorported into sputtered Co and Co-Cr films by the addition of controlled amounts of oxygen to the argon sputter gas atmosphere. The influence of the oxygen incorporation was evaluated by the analysis of the magnetic properties and the structural characteristics of the films. The coercivity was found to increase with increasing oxygen incorporation for both Co and Co-Cr films. The saturation magnetization (Ms) in Co decreases as the oxygen content increases whereas Msfor Co-Cr films initially increases as Cr is depleted by selective oxidation. The mechanism for the change in coercivity is attributed to changes in the coupling between magnetic regions, rather than changes in grain size.
  • Keywords
    Magnetic film memories; Argon; Atmosphere; Cobalt; Coercive force; Magnetic analysis; Magnetic films; Oxygen; Saturation magnetization; Sputtering; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1064015
  • Filename
    1064015