DocumentCode :
1012633
Title :
Four-layer silicon diodes
Author :
Fok, S.M. ; Horsley, G.S. ; Sah, C.T. ; Sello, H.
Author_Institution :
Shockley Semiconductor Lab., Mountain View, Calif.
Volume :
5
Issue :
2
fYear :
1958
fDate :
4/1/1958 12:00:00 AM
Firstpage :
114
Lastpage :
114
Keywords :
Cameras; Contacts; Driver circuits; Electric variables; Electrons; Germanium alloys; III-V semiconductor materials; Packaging; Photoconducting devices; Photoconductivity; Semiconductor diodes; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1958.14375
Filename :
1472418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1012633
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