Title :
Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases
Author :
Mizutani, Tomoko ; Fujita, S. ; Yanagawa, Fumiki
Author_Institution :
NTT, Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
A new complementary circuit employing high-mobility two-dimensional electron and hole gases (2DEG and 2DHG)induced at the AIGaAs/GaAs heterointerface has been suc-cessfully fabricated on an n+-Ge/undoped AlGaAs/undopedGaAs heterostructure grown by molecular beam epitaxy. Thecircuit includes an n+-Ge/WSi;c-gate n-channel FET and aWSix-gate p-channel FET fabricated by self-aligned implan-tation technology. A 15-stage ring oscillator shows aminimum delay time of 125 ps at 300 K and 100 ps at 83 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; 100 ps minimum delay time at 83K; 125 ps minimum delay time at 300K; 15-stage ring oscillator; 2DEG; 2DHG; AlGaAs/GaAs heterostructure MISFETs; III-V semiconductors; WSix-gate p-channel FET; complementary circuit; high-mobility; hole gases; molecular beam epitaxy; n+-Ge/WSix-gate n-channel FET; n+-Ge/undoped AlGaAs/undoped GaAs heterostructure; self-aligned implantation technology; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850793
