Title :
GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000
Author :
Cazarre, A. ; Tasselli, Josiane ; Marty, Alain ; Bailbe, J.P. ; Rey, Germain
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
Abstract :
A simple mesa GaAlAs/GaAs heterojunction bipolar phototransistor fabricated by LPE growth technique is presented. A high current gain of the order of 50 000 has been obtained and is believed to be the highest ever reported for a bipolar device. The corresponding high sensitivity is about 15 000 A/W for an 800 nm illumination wavelength.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; liquid phase epitaxial growth; phototransistors; semiconductor growth; GaAlAs/GaAs heterojunction bipolar phototransistors; LPE growth; current gain 50000; high sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850797
