DocumentCode :
1012740
Title :
Dark noise of Ga0.47 In0.53As photoconductive detectors
Author :
Antreasyan, A. ; Chen, C.Y. ; Garbinski, P.A.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Volume :
21
Issue :
24
fYear :
1985
Firstpage :
1136
Lastpage :
1138
Abstract :
We have studied the dark noise of planar, interdigitated Ga0.47In0.53As photoconductive detectors by measuring the statistical distribution of the dark current under DC bias. The measurements reveal two interesting results: (i) the probability distribution of the dark current around its DC level is Gaussian and (ii) the standard deviation of the probability distribution grows exponentially with increasing bias voltage. Utilising these data an optimum bias level was calculated to maximise the receiver sensitivity of the detector.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; photoconductive cells; photodetectors; DC bias; Ga0.47In0.53As photoconductive detectors; Gaussian distribution; dark current statistical distribution; dark noise; optimum bias level; probability distribution; receiver sensitivity; standard deviation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850805
Filename :
4251661
Link To Document :
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