• DocumentCode
    1012740
  • Title

    Dark noise of Ga0.47 In0.53As photoconductive detectors

  • Author

    Antreasyan, A. ; Chen, C.Y. ; Garbinski, P.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    21
  • Issue
    24
  • fYear
    1985
  • Firstpage
    1136
  • Lastpage
    1138
  • Abstract
    We have studied the dark noise of planar, interdigitated Ga0.47In0.53As photoconductive detectors by measuring the statistical distribution of the dark current under DC bias. The measurements reveal two interesting results: (i) the probability distribution of the dark current around its DC level is Gaussian and (ii) the standard deviation of the probability distribution grows exponentially with increasing bias voltage. Utilising these data an optimum bias level was calculated to maximise the receiver sensitivity of the detector.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; indium compounds; photoconductive cells; photodetectors; DC bias; Ga0.47In0.53As photoconductive detectors; Gaussian distribution; dark current statistical distribution; dark noise; optimum bias level; probability distribution; receiver sensitivity; standard deviation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850805
  • Filename
    4251661