DocumentCode
1012740
Title
Dark noise of Ga0.47 In0.53As photoconductive detectors
Author
Antreasyan, A. ; Chen, C.Y. ; Garbinski, P.A.
Author_Institution
AT&T Bell Laboratories, Murray Hill, USA
Volume
21
Issue
24
fYear
1985
Firstpage
1136
Lastpage
1138
Abstract
We have studied the dark noise of planar, interdigitated Ga0.47In0.53As photoconductive detectors by measuring the statistical distribution of the dark current under DC bias. The measurements reveal two interesting results: (i) the probability distribution of the dark current around its DC level is Gaussian and (ii) the standard deviation of the probability distribution grows exponentially with increasing bias voltage. Utilising these data an optimum bias level was calculated to maximise the receiver sensitivity of the detector.
Keywords
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; photoconductive cells; photodetectors; DC bias; Ga0.47In0.53As photoconductive detectors; Gaussian distribution; dark current statistical distribution; dark noise; optimum bias level; probability distribution; receiver sensitivity; standard deviation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850805
Filename
4251661
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