Title :
Molecular-beam-epitaxy-grown single-longitudinal-mode GaAs-AlGaAs interferometric lasers on stepped-channelled substrates
Author :
Minghuang Hong, J. ; Werner, Max Jonas ; Wu, Yao-Hwa ; Wang, Shyh
Author_Institution :
University of California, Department of Electrical Engineering & Computer Sciences and Electronic Research Laboratory, Berkeley, USA
Abstract :
The GaAs-AlGaAs double-heterostructure interferometric lasers were successfully grown by molecular beam epitaxy on [011]-oriented-stepped-channelled GaAs(100) substrates. These lasers have a side-mode suppression ratio of greater than 200:1.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; GaAs (100) substrate; GaAs-AlGaAs double-heterostructure interferometric lasers; molecular beam epitaxy; semiconductor laser; side-mode suppression ratio; single longitudinal mode lasers; stepped-channelled substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850806
