Title :
Degradation mode in semiconductor optical modulators
Author :
Yuda, M. ; Fukuda, M. ; Miyazawa, H.
fDate :
9/28/1995 12:00:00 AM
Abstract :
A degradation mode in Mach-Zehnder semiconductor optical modulators with InGaAs/InAlAs MQWs is investigated. The main accelerating factors are the input optical power and the applied voltage in high stress tests. The main cause of degradation is found to be the destruction of the p-n junction on the side wall of the ridge waveguide. The time to failure is consequently expected to be >105 h under practical operating conditions in optical fibre transmission systems
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; semiconductor quantum wells; 1E5 h; InGaAs-InAlAs; InGaAs/InAlAs MQWs; Mach-Zehnder semiconductor optical modulators; degradation mode; optical fibre transmission systems; p-n junction; ridge waveguide; side wall; time to failure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951227
