Title :
An ion-implantation model incorporating damage calculations in crystalline targets
Author :
Crandle, Timothy L. ; Mulvaney, Brian J.
Author_Institution :
Technol. Modeling Associates Inc., Palo Alto, CA, USA
Abstract :
A computer simulation for modeling ion implantation which incorporates the effects of channeling and damage is discussed. The simulation calculates the trajectories of implanted ions through an idealized crystal structure. Secondary generation is modeled using a damage threshold energy. The concentration of interstitials which results is used as a measure of the damage sustained by the target. The accumulated damage is used as a criterion for whether the substrate is treated as amorphous or crystalline. Modeling the crystalline-to-amorphous transition in this manner enables simulation of dose-dependent implantation. The model accounts for temperature-dependent self-annealing using an empirically determined temperature-dependent damage threshold.<>
Keywords :
amorphisation; channelling; digital simulation; interstitials; ion implantation; accumulated damage; amorphous substrate; channeling effects; computer simulation; crystalline substrate; crystalline-to-amorphous transition; damage calculations; damage threshold energy; dose-dependent implantation; idealized crystal structure; implanted ion trajectories; interstitial concentration; ion-implantation model; secondary generation; target damage; temperature-dependent damage threshold; temperature-dependent self-annealing; Amorphous materials; Computational modeling; Computer simulation; Crystallization; Energy loss; Implants; Ion implantation; Lattices; Nuclear electronics; Silicon;
Journal_Title :
Electron Device Letters, IEEE
