Title :
Visible-blind ultraviolet photodetectors based on GaN p-n junctions
Author :
Chen, Q. ; Khan, M.Asif ; Sun, C.J. ; Yang, J.W.
Author_Institution :
APA Opt. Inc., Blaine, MN, USA
fDate :
9/28/1995 12:00:00 AM
Abstract :
Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long wavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 μs at 325 nm
Keywords :
III-V semiconductors; gallium compounds; p-n junctions; photodetectors; ultraviolet detectors; 300 mus; 325 to 370 nm; GaN; GaN p-n junctions; fall time; long wavelength cutoff wavelength; responsivity; rise time; visible-blind ultraviolet photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951190
