DocumentCode
1012809
Title
Visible-blind ultraviolet photodetectors based on GaN p-n junctions
Author
Chen, Q. ; Khan, M.Asif ; Sun, C.J. ; Yang, J.W.
Author_Institution
APA Opt. Inc., Blaine, MN, USA
Volume
31
Issue
20
fYear
1995
fDate
9/28/1995 12:00:00 AM
Firstpage
1781
Lastpage
1782
Abstract
Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long wavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 μs at 325 nm
Keywords
III-V semiconductors; gallium compounds; p-n junctions; photodetectors; ultraviolet detectors; 300 mus; 325 to 370 nm; GaN; GaN p-n junctions; fall time; long wavelength cutoff wavelength; responsivity; rise time; visible-blind ultraviolet photodetectors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951190
Filename
469251
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