Title :
High-frequency transistors by the diffused-meltback process employing three impurities
Author :
Lesk, I.A. ; Gonzales, R.E.
Author_Institution :
General Electric Co., Syracuse, N. Y.
fDate :
4/1/1958 12:00:00 AM
Keywords :
Circuit testing; Cutoff frequency; Fabrication; Gain measurement; Geometry; Germanium; Impurities; Performance gain; Power measurement; Production; Silicon; Switches; VHF circuits; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1958.14394
