Title :
Double-resonance technique for C/V measurements of semiconductor devices
Author :
de Cogan, D. ; Alani, A.
Author_Institution :
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Abstract :
A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.
Keywords :
capacitance measurement; circuit resonance; semiconductor device testing; C-V characteristics; capacitance measurement; capacitance/voltage characteristics; double-resonance technique; forward bias; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850816
