DocumentCode
1012839
Title
High reliability of 1.5 μm two-step VPE-LPE-grown DC-PBH lasers
Author
Sugou, S. ; Nishimoto, H. ; Kitamura, Masayuki ; Mito, I. ; Yanase, T.
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
21
Issue
24
fYear
1985
Firstpage
1154
Lastpage
1156
Abstract
The reliability of 1.5 μm InGaAsP/InP DC-PBH lasers prepared by two-step hydride VPE and LPE was estimated at the 70°C, 5 mW constant-power mode. The low degradation rate (8×10-5/h) indicated high reliability of the two-step VPE-LPE-grown LDs with the VPE-grown active layer.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; optical communication equipment; reliability; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; InGaAsP/InP DC-PBH lasers; low degradation rate; optical communication; reliability; semiconductor laser; two step VPE LPE growth; wavelength 1.5 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850817
Filename
4251677
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