Title :
High reliability of 1.5 μm two-step VPE-LPE-grown DC-PBH lasers
Author :
Sugou, S. ; Nishimoto, H. ; Kitamura, Masayuki ; Mito, I. ; Yanase, T.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
The reliability of 1.5 μm InGaAsP/InP DC-PBH lasers prepared by two-step hydride VPE and LPE was estimated at the 70°C, 5 mW constant-power mode. The low degradation rate (8×10-5/h) indicated high reliability of the two-step VPE-LPE-grown LDs with the VPE-grown active layer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; optical communication equipment; reliability; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; InGaAsP/InP DC-PBH lasers; low degradation rate; optical communication; reliability; semiconductor laser; two step VPE LPE growth; wavelength 1.5 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850817
