Title :
Model for roll-off behaviour of electron effective mobility from universal curve
Author_Institution :
Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
fDate :
9/28/1995 12:00:00 AM
Abstract :
A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels
Keywords :
MIS devices; MOSFET; electron mobility; semiconductor device models; MOS inversion layers; channel doping levels; electron effective mobility; ionised impurities; low field region; physically-based model; roll-off behaviour; screened Coulomb scattering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951188
