• DocumentCode
    1012859
  • Title

    Model for roll-off behaviour of electron effective mobility from universal curve

  • Author

    Shin, Hyungsoon

  • Author_Institution
    Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea
  • Volume
    31
  • Issue
    20
  • fYear
    1995
  • fDate
    9/28/1995 12:00:00 AM
  • Firstpage
    1789
  • Lastpage
    1791
  • Abstract
    A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels
  • Keywords
    MIS devices; MOSFET; electron mobility; semiconductor device models; MOS inversion layers; channel doping levels; electron effective mobility; ionised impurities; low field region; physically-based model; roll-off behaviour; screened Coulomb scattering;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951188
  • Filename
    469257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012859