Title :
Open-circuit voltage of induced/surface-doped junction solar cells
Author :
Hoi, C.S. ; Lam, Y.W.
Author_Institution :
Chinese University of Hong Kong, Department of Electronics, Shatin, Hong Kong
Abstract :
The open-circuit voltage Voc of induced/surface-doped junction solar cells is evaluated numerically. For different substrate doping levels Na, different combinations of oxide charge density Qss and surface doping Nd produce different characteristics for reaching the maximum Voc. Cells optimally designed with certain combinations of Qss and Nd are shown to be immune to interface states.
Keywords :
semiconductor device models; solar cells; induced/surface-doped junction solar cells; interface states; model; numerical calculation; open-circuit voltage; oxide charge density; substrate doping levels; surface doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850819
