• DocumentCode
    1012861
  • Title

    Open-circuit voltage of induced/surface-doped junction solar cells

  • Author

    Hoi, C.S. ; Lam, Y.W.

  • Author_Institution
    Chinese University of Hong Kong, Department of Electronics, Shatin, Hong Kong
  • Volume
    21
  • Issue
    24
  • fYear
    1985
  • Firstpage
    1157
  • Lastpage
    1159
  • Abstract
    The open-circuit voltage Voc of induced/surface-doped junction solar cells is evaluated numerically. For different substrate doping levels Na, different combinations of oxide charge density Qss and surface doping Nd produce different characteristics for reaching the maximum Voc. Cells optimally designed with certain combinations of Qss and Nd are shown to be immune to interface states.
  • Keywords
    semiconductor device models; solar cells; induced/surface-doped junction solar cells; interface states; model; numerical calculation; open-circuit voltage; oxide charge density; substrate doping levels; surface doping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850819
  • Filename
    4251681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012861