Suppression of hot-carrier degradation in Si MOSFETs by germanium doping

Author

Ng, Kwok K. ; Pai, Chien-Shing ; Mansfield, William M. ; Clarke, G.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

11

Issue

1

fYear

1990

Firstpage

45

Lastpage

47

Abstract

Presently there are two approaches to the reduction of hot-carrier effects in Si MOSFETs: the use of lightly-doped-drain/double-diffused-drain (LDD/DDD) structures and the reduction of applied bias. Both of these suffer certain penalties. A technique for incorporating Ge impurities in the channel that creates additional scattering so that ´lucky´ hot carriers are less probable is introduced. Results indicate that while the initial MOSFET characteristics are maintained, the degradation rate under voltage stress is much reduced.<>

Keywords

elemental semiconductors; germanium; hot carriers; insulated gate field effect transistors; semiconductor device testing; semiconductor doping; silicon; Si MOSFETs; Si transistor; Si:Ge; applied bias reduction; channel impurities; degradation rate; germanium doping; hot-carrier degradation; initial MOSFET characteristics; light-doped drain/double-diffused-drain structures; lucky hot carriers; scattering; voltage stress; BiCMOS integrated circuits; Degradation; Doping; Germanium; Hot carrier effects; Hot carriers; Impurities; Light scattering; MOSFETs; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46926

Filename

46926