Title :
Suppression of hot-carrier degradation in Si MOSFETs by germanium doping
Author :
Ng, Kwok K. ; Pai, Chien-Shing ; Mansfield, William M. ; Clarke, G.A.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Presently there are two approaches to the reduction of hot-carrier effects in Si MOSFETs: the use of lightly-doped-drain/double-diffused-drain (LDD/DDD) structures and the reduction of applied bias. Both of these suffer certain penalties. A technique for incorporating Ge impurities in the channel that creates additional scattering so that ´lucky´ hot carriers are less probable is introduced. Results indicate that while the initial MOSFET characteristics are maintained, the degradation rate under voltage stress is much reduced.<>
Keywords :
elemental semiconductors; germanium; hot carriers; insulated gate field effect transistors; semiconductor device testing; semiconductor doping; silicon; Si MOSFETs; Si transistor; Si:Ge; applied bias reduction; channel impurities; degradation rate; germanium doping; hot-carrier degradation; initial MOSFET characteristics; light-doped drain/double-diffused-drain structures; lucky hot carriers; scattering; voltage stress; BiCMOS integrated circuits; Degradation; Doping; Germanium; Hot carrier effects; Hot carriers; Impurities; Light scattering; MOSFETs; Voltage;
Journal_Title :
Electron Device Letters, IEEE
