Title :
661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer
Author :
Kobayashi, Kaoru ; Kawata, Shigeo ; Gomyo, A. ; Hino, I. ; Suzuki, Takumi
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
We report for the first time on room-temperature (25°C) continuous-wave (CW) operation of AlGaInP double-heterostructure lasers with an aluminium-containing quaternary active layer. The active layer is (Al0.1Ga0.9)0.5In0.5P. The lasing wavelength is 661.7 nm, which is the shortest ever reported for semiconductor lasers. The threshold current is 120 mA (6.7 kA/cm2).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; (Al0.1Ga0.9)0.5In0.5P active layer; AlGaInP DH laser; room-temperature CW operation; semiconductor lasers; threshold current 120 mA; wavelength 661.7 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850822
