Title :
High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications
Author :
Xu, S. ; Baiocchi, F. ; Safar, H. ; Lott, J. ; Shibib, A. ; Xie, Z. ; Nigam, T. ; Jones, B. ; Thompson, B. ; Desko, J. ; Gammel, P.
Author_Institution :
Agere Syst., Allentown, PA, USA
fDate :
6/17/2004 12:00:00 AM
Abstract :
In this paper, an RF LDMOSFET is demonstrated with excellent RF performance. It achieves high power gain of 14.5 db at a high power of 130 W at 2.1 GHz. Its high efficiency and linearity make it highly desirable in many applications. A substrate dimension of 2 ml enables the best-in-class thermal stability. Low hot carrier injection (HCI) degradation, integrated electrostatic discharge (ESD) structures and gold metal ensure good long-term reliability.
Keywords :
SPICE; finite element analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; thermal analysis; DC measurements; IGBT electrothermal model; IGBT package; Kraus model; PSpice; advanced electrothermal Spice modelling; electrical IGBT model; electrical impact; finite element model; instantaneous junction temperature; insulated gate bipolar transistors; latchup; power IGBT; self-heating; steady state dependent IGBT operation; thermal circuit; transient FBSOA measurements; transient temperature dependent IGBT operation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20040455
