An InP MISFET with a power density of 1.8 W/mm at 30 GHz

Author

Saunier, Paul ; Nguyen, Richard ; Messick, L.J. ; Khatibzadeh, M.A.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

11

Issue

1

fYear

1990

Firstpage

48

Lastpage

49

Abstract

The millimeter-wave power performance of a 75- mu m*0.3- mu m InP MISFET with SiO/sub 2/ insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency.<>

Keywords

III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 120 mS; 20 percent; 30 GHz; 35 V; InP MISFET; InP-SiO/sub 2/ transistor; SiO/sub 2/ insulator; current density; gate source breakdown voltage; gate-drain breakdown voltages; high intrinsic transconductance; millimeter-wave power performance; power density; power-added efficiency; three-terminal device; Electrons; FETs; Fabrication; Frequency; Gallium arsenide; Indium phosphide; MISFETs; Ohmic contacts; Plasma temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46927

Filename

46927