Title :
Novel MOS memory for serial signal processing applications
Author :
McGrath, D.S. ; Myers, D.J.
Author_Institution :
University of Sydney, School of Electrical Engineering, Sydney, Australia
Abstract :
A novel serial memory is reported, based on an array of MOS three transistor cells, which does not require serial-parallel data format convertors on the input and output. It can be used to realise compact, low-power delay elements of programmable length and is suitable for application in serial digital signal processing integrated circuits.
Keywords :
CMOS integrated circuits; computerised signal processing; delay circuits; integrated memory circuits; CMOS IC; MOS memory; digital signal processing integrated circuits; low-power delay elements; serial signal processing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850827
