DocumentCode
1012992
Title
Reverse blocking IGBT for matrix converter with ultra-thin wafer technology
Author
Takei, M. ; Naito, T. ; Ueno, K.
Author_Institution
Fuji Electr. Adv. Technol. Co. Ltd., Nagano, Japan
Volume
151
Issue
3
fYear
2004
fDate
6/17/2004 12:00:00 AM
Firstpage
243
Lastpage
247
Abstract
A high performance vertical 600 V-50 A IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined with a deep boron diffusion technique results in a great improvement on trade-off performance. Two RB-IGBTs connected in anti-parallel form a bi-directional switch. These bi-directional switches are necessary to implement a high efficiency matrix converter.
Keywords
IMPATT oscillators; carrier lifetime; circuit oscillations; semiconductor device models; carrier lifetime control; charged deep donor states; device simulation; dynamic IMPATT oscillations; electron-radiated devices; helium-radiated device; high-frequency IMPATT oscillations; homogenous vertical distribution; irradiation process; lifetime-controlled device; local vertical distribution; radiation induced deep centres; threshold voltage temperature dependence;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20040450
Filename
1306926
Link To Document