1.7 kV NPTV-groove clustered IGBT

A novel MOS-gated thyristor with excellent current saturation capability has been fabricated in 1.7 kV NPT technology. The new device uses V-groove trench gates fabricated by TMAH chemical etching to reduce fabrication costs. Experimental results demonstrate that the new V-groove CIGBT displays a good forward voltage drop of 2.2 V owing to the incorporation of the thyristor concept, which represents 18% improvement in comparison to state-of-the-art 1.7 kV NPT TIGBT. Moreover, the new V-groove CIGBT has been switched off in an inductive circuit and was tested under short-circuit conditions for 10 μs.