• DocumentCode
    1013108
  • Title

    The emitter tetrode

  • Author

    Gudmundsen, R.A.

  • Author_Institution
    Hughes Aircraft Co., Culver City, Calif.
  • Volume
    5
  • Issue
    4
  • fYear
    1958
  • Firstpage
    223
  • Lastpage
    225
  • Abstract
    If two ohmic contacts are made to the thin emitter region of a transistor in the form of a ring around the periphery and a dot in the center, it is possible to vary the ratio of the emitted current density under the center dot to the emitted density under the ring by passing a transverse current radially through the emitter region. This makes it possible to reduce the surface losses in such a transistor esentially to zero, at some expense of increased base resistance. Such a controllable alpha makes possible feedback stabilization into an independent terminal. The essential theory of operation and experimental verification of the calculations are shown and discussed.
  • Keywords
    Circuits; Current density; Electron devices; Feedback; Geometry; Helium; Ohmic contacts; P-n junctions; Radiative recombination; Surface resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1958.14426
  • Filename
    1472469