DocumentCode
1013108
Title
The emitter tetrode
Author
Gudmundsen, R.A.
Author_Institution
Hughes Aircraft Co., Culver City, Calif.
Volume
5
Issue
4
fYear
1958
Firstpage
223
Lastpage
225
Abstract
If two ohmic contacts are made to the thin emitter region of a transistor in the form of a ring around the periphery and a dot in the center, it is possible to vary the ratio of the emitted current density under the center dot to the emitted density under the ring by passing a transverse current radially through the emitter region. This makes it possible to reduce the surface losses in such a transistor esentially to zero, at some expense of increased base resistance. Such a controllable alpha makes possible feedback stabilization into an independent terminal. The essential theory of operation and experimental verification of the calculations are shown and discussed.
Keywords
Circuits; Current density; Electron devices; Feedback; Geometry; Helium; Ohmic contacts; P-n junctions; Radiative recombination; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1958.14426
Filename
1472469
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