• DocumentCode
    1013117
  • Title

    Green-emitting organic vertical-cavity laser pumped by InGaN-based laser diode

  • Author

    Sakata, H. ; Takeuchi, H.

  • Author_Institution
    Shizuoka Univ., Hamamatsu
  • Volume
    43
  • Issue
    25
  • fYear
    2007
  • Firstpage
    1431
  • Lastpage
    1433
  • Abstract
    An organic vertical-cavity surface-emitting laser is demonstrated, which is pumped by an InGaN-based blue laser diode. The vertical-cavity laser structure consists of a poly-N-vinylcarbazole film doped with Coumarin 540A and two Bragg reflectors made of TiO2/SiO2 quarter-wave thin films. By driving the pump laser diode with a pulse width of 3.5 ns, singlemode lasing was achieved at a wavelength of 540 nm for a threshold pump power of 137 mW/pulse.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; organic semiconductors; semiconductor lasers; surface emitting lasers; thin film circuits; Bragg reflectors; Coumarin 540A; InGaN; TiO2-SiO2; blue laser diode; green-emitting organic vertical-cavity laser; organic vertical-cavity surface-emitting laser; poly-N-vinylcarbazole film; pump laser diode; quarter-wave thin films; singlemode lasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20079012
  • Filename
    4405604