Current instabilities in Ga0.47In0.53As transferred-electron devices

Time-resolved measurements of the device current in Ga0.47In0.53As transferred-electron devices are presented. The current drop, usually attributed to domain nucleation shows an unexpected behaviour because a drop of the device current of up to 90% is observed. This cannot be explained solely by the model of domain formation caused by electron transfer. The influence of transport properties of the central valley is discussed, giving rise to the assumption of its dominant effect on domain nucleation.