Title :
Measurement of 1.3 and 1.55 μm gain-switched semiconductor laser pulses with a picosecond IR streak camera and a high-speed InGaAs PIN photodiode
Author :
Lin, Chong ; Bowers, John E.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
Gain-switched semiconductor laser pulses at 1.3 and 1.55 μm were measured both with a high-speed InGaAs PIN photodiode and an IR synchroscan streak camera. Gain-switching characteristics and their bias dependence observed with both detection schemes are consistent with each other. Laser pulses of 24-30 ps duration are observed. Picosecond pulses from a gain-switched 1.55 μm DFB laser are found to be chirped but not transform-limited.
Keywords :
distributed feedback lasers; laser modes; semiconductor junction lasers; DFB laser; IR synchroscan streak camera; InGaAs PIN photodiode; bias dependence; gain-switched semiconductor laser pulses; picosecond IR streak camera; wavelength 1.3 microns; wavelength 1.55 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850847
