Title :
1.3 μm InP/InGaAsP channelled-substrate buried-heterostructure laser monolithically integrated with a photodetector
Author :
Koszi, L.A. ; Chin, A.K. ; Segner, B.P. ; Shen, T.M. ; Dutta, N.K.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
A 1.3 μm InP/InGaAsP channelled-substrate buried-heterostructure laser is monolithically integrated with a monitoring photodetector. The lasers have threshold currents in the range of 25-30 mA and the photodetector provides ~ 15 μA of photocurrent per milliwatt of laser power.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodetectors; semiconductor junction lasers; 1.3 microns wavelength; InP/InGaAsP; channelled-substrate buried-heterostructure laser; laser power; monitoring photodetector; monolithic IC; semiconductor junction lasers; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850852
