DocumentCode
1013238
Title
Fully ion-implanted InP JFET with buried p-layer
Author
Kim, Sung J. ; Jeong, Jichai ; Vella-Coleiro, G.P. ; Smith, P.R.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
11
Issue
1
fYear
1990
Firstpage
57
Lastpage
58
Abstract
Implementation of a buried p-layer in a fully ion implanted InP JFET is discussed. Using Be coimplanted with Si, a sharp channel profile is obtained. The saturation current has been reduced, and the pinch-off characteristic has been improved, with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared.<>
Keywords
III-V semiconductors; equivalent circuits; indium compounds; ion implantation; junction gate field effect transistors; InP JFET; InP:Be,Si; buried p-layer; cutoff frequency; equivalent circuits; ion implanted; pinch-off characteristic; saturation current; sharp channel profile; transconductance; Doping profiles; FETs; Fabrication; Gallium arsenide; Implants; Indium phosphide; MESFETs; Tail; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.46930
Filename
46930
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