DocumentCode :
1013298
Title :
Microwave frequency beating between monolithically integrated quantum-dot ring lasers
Author :
Cao, H.-J. ; Withers, N.J. ; Smolyakov, G.A. ; Osinski, M.
Author_Institution :
AdTech Opt., Inc., Industry
Volume :
43
Issue :
25
fYear :
2007
Firstpage :
1456
Lastpage :
1458
Abstract :
The fabrication of quantum-dot-based optoelectronic integrated circuits incorporating twin ring diode lasers, waveguides, directional couplers, a Y-junction mixer, and photodetectors, is reported. Microwave frequency beating between longitudinal modes from individual ring diode lasers as well as beat notes between integrated twin ring diode lasers are demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; masers; photodetectors; quantum dot lasers; ring lasers; InAs-InGaAs-GaAs; Y-junction mixer; directional couplers; microwave frequency beating; monolithically integrated quantum-dot ring lasers; photodetectors; quantum-dot-based optoelectronic integrated circuits; ring diode lasers; waveguides;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20073008
Filename :
4405621
Link To Document :
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