DocumentCode :
1013347
Title :
Perpendicular anisotropy in rare earth-transition metal amorphous films prepared by dual ion beam sputtering
Author :
Okamine, S. ; Ohta, N. ; Sugita, Y.
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume :
21
Issue :
5
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1641
Lastpage :
1643
Abstract :
The effect of resputtering on perpendicular magnetic anisotropy has been investigated for amorphous Gd-Co, Gd-Fe, Tb-Co and Tb-Fe films using a dual ion beam sputtering system. In Tb-Co and Tb-Fe films, perpendicular anisotropy increases remarkably owing to resputtering, while in Gd-Co and Gd-Fe films, it changes only through compositional change caused by resputtering. It is likely that the different behaviors between two cases are due to the fact that Tb is anisotropic and Gd is isotropic atom. However, its mechanism is not clear.
Keywords :
Amorphous magnetic films/devices; Magnetooptic memories; Perpendicular magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Argon; Atomic layer deposition; Current density; Ion beams; Magnetic films; Perpendicular magnetic anisotropy; Sputtering; Substrates;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1985.1064077
Filename :
1064077
Link To Document :
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