Title :
Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts
Author :
Pei, Y. ; Recht, F. ; Fichtenbaum, N. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Univ. of California, Santa Barbara
Abstract :
Silicon ions were implanted to source-drain regions to achieve a non- alloyed ohmic contact resistance as low as 0.2 Omegaldrmm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic fT of 92 GHz and an extrinsic fmax of 148 GHz have been measured in a passivated 0.15 x 150 mum device. Power measurements at 10 GHz showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ion implantation; millimetre wave field effect transistors; ohmic contacts; wide band gap semiconductors; AlGaN-GaN; deep submicron HEMT; frequency 10 GHz; frequency 148 GHz; frequency 92 GHz; high electron mobility transistors; ion implanted source-drain regions; nonalloyed ohmic contact resistance; nonalloyed ohmic contacts; power density; power measurements; power-added-efficiency; silicon ions; voltage 20 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072969
