Title :
Nonoverlapping super self-aligned device structure for high-performance VLSI
Author :
Chiu, Tzu-Yin ; Chin, Gen M. ; Lau, Maureen Y. ; Hanson, Ronald C. ; Morris, Mark D. ; Lee, Kwing F. ; Voshchenkov, Alexander M. ; Swartz, Robert G. ; Archer, Vance D. ; Liu, Mark T Y ; Finegan, Sean N. ; Feuer, Mark D.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
The nonoverlapping super self-aligned structure (NOVA) is reported. Because of its nonoverlapping nature, this structure can be applied equally well to bipolar, CMOS, or BiCMOS processes. This structure effectively minimizes parasitic capacitance and resistance for both the MOS and bipolar devices. CMOS and bipolar devices are integrated into a high-performance BiCMOS technology. CMOS and emitter-coupled logic (ECL) ring oscillators with 1.5- mu m lithography are reported to have delays of 128 and 87 ps/stage, respectively.<>
Keywords :
VLSI; integrated circuit technology; monolithic integrated circuits; 1.5 micron; BiCMOS processes; CMOS; NOVA; VLSI; bipolar; emitter-coupled logic; lithography; nonoverlapping super self-aligned structure; parasitic capacitance; parasitic resistance; ring oscillators; BiCMOS integrated circuits; CMOS technology; Conductivity; Electrodes; Etching; Fabrication; MOS devices; Resists; Silicides; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
