• DocumentCode
    1013388
  • Title

    Early voltage in very-narrow-base bipolar transistors

  • Author

    Roulston, D.J.

  • Author_Institution
    Dept. of Metall. & Sci. of Mater., Oxford Univ., UK
  • Volume
    11
  • Issue
    2
  • fYear
    1990
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    It is shown that for VLSI devices with very narrow base widths (less than 0.1 mu m), the velocity saturation effect gives a substantial increase in Early voltage and a corresponding beneficial increase in output resistance. The theory is discussed, and practical results are presented.<>
  • Keywords
    VLSI; bipolar integrated circuits; bipolar transistors; Early voltage; VLSI devices; output resistance; velocity saturation effect; very-narrow-base bipolar transistors; Bipolar transistors; Capacitance; Charge carrier processes; Current density; Doping; Electron mobility; Kirk field collapse effect; Photonic band gap; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.46937
  • Filename
    46937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013388