Title :
A two-dimensional numerical approach to achieve a silicon BCCD cell optimal design
Author :
Carquet, Michel ; Rigaud, Dominique ; Touboul, André ; Thénoz, Yves
Author_Institution :
Centre d´´Electron. de Monpellier, CNRS, Montpellier, France
fDate :
9/1/1988 12:00:00 AM
Abstract :
The single charge stored in a silicon buried-channel charge-coupled device (BCCD) is studied under different technological specification. The approach is to seek an accurate determination of this parameter by using a 2-D numerical device analysis program. The calculated data are compared to experimentally measured BCCD characteristics. These investigations have led to some trends for design optimization for designers whose main motivation is the scaling down of BCCDs
Keywords :
charge-coupled devices; elemental semiconductors; semiconductor device models; silicon; BCCD cell optimal design; CCD; Si; buried-channel charge-coupled device; design optimization; modelling; numerical device analysis program; scaling down; semiconductor; two-dimensional numerical approach; Boron; Charge coupled devices; Design optimization; Helium; Implants; Signal design; Silicon; Solid state circuits; Substrates; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
