• DocumentCode
    1013621
  • Title

    Random telegraph noise of deep-submicrometer MOSFETs

  • Author

    Hung, K.K. ; Ko, P.K. ; Hu, Chenming ; Cheng, Yiu Chung

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    11
  • Issue
    2
  • fYear
    1990
  • Firstpage
    90
  • Lastpage
    92
  • Abstract
    The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area (>
  • Keywords
    carrier mobility; electron device noise; insulated gate field effect transistors; random noise; carrier mobility; carrier number; current fluctuations; deep-submicrometer MOSFETs; flicker noise; random telegraph noise; room temperature; small channel area; trapped charges; 1f noise; Data mining; Fluctuations; MOSFETs; Noise generators; Noise level; Scattering; Telegraphy; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.46938
  • Filename
    46938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013621