Title :
Random telegraph noise of deep-submicrometer MOSFETs
Author :
Hung, K.K. ; Ko, P.K. ; Hu, Chenming ; Cheng, Yiu Chung
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area (>
Keywords :
carrier mobility; electron device noise; insulated gate field effect transistors; random noise; carrier mobility; carrier number; current fluctuations; deep-submicrometer MOSFETs; flicker noise; random telegraph noise; room temperature; small channel area; trapped charges; 1f noise; Data mining; Fluctuations; MOSFETs; Noise generators; Noise level; Scattering; Telegraphy; Temperature;
Journal_Title :
Electron Device Letters, IEEE
